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MG300Q2YS61
TOSHIBA IGBT Module Silicon N Channel IGBT
MG300Q2YS61
High Power Switching Applications Motor Control Applications
* * * * * * High input impedance High speed: tf = 0.3 s (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case. Unit: mm
Equivalent Circuit
C1
G1
JEDEC
E1 E1/C2
2-109C4A
JEITA TOSHIBA
G2 E2 E2
Weight: 430 g (typ.)
Maximum Ratings (Tc = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current DC (Tc = 80C) DC (Tc = 80C) Symbol VCES VGES IC IF PC Tj Tstg Visol Terminal Mounting 3/4 3/4 Rating 1200 20 300 300 2700 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A A W C C Vrms N*m N*m
Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque
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MG300Q2YS61
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) IF = 300 A, VGE = 0 V Tc = 25C Tc = 125C Inductive load VCC = 600 V IC = 300 A VGE = 15 V RG = 2.7 W Test Condition VGE = 20 V, VCE = 0 V VCE = 1200 V, VGE = 0 V IC = 300 mA, VCE = 5V IC = 300 A, VGE = 15 V Tc = 25C Tc = 125C Min 3/4 3/4 6.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 (Note 1) 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 7.0 2.1 2.7 25000 0.3 0.2 0.5 0.5 0.1 0.6 2.4 2.2 0.2 3/4 3/4 Max 500 1 8.0 2.6 3.2 3/4 3/4 3/4 3/4 3/4 0.3 3/4 2.8 3/4 3/4 0.045 0.100 V ms C/W ms Unit nA mA V V pF
VCE = 10 V, VGE = 0 V, f = 1 MHz
IF = 300 A, VGE = -15 V, di/dt = 1500 A/ms Transistor stage Diode stage
Note 1: Switching time and reverse recovery time test circuit and timing chart
RG -VGE IC RG
IF
VGE 0
90% 10%
L
VCC IC VCE 0 10% td (off) toff tf 10% td (on) ton tr
90%
90%
Irr IF IF trr
90% Irr 50% Irr
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MG300Q2YS61
< VCE (sat) Rank >
VCE (sat)
Rank Symbol 21 22 23 24 25 26 27 Min 1.80 1.90 2.00 2.10 2.20 2.30 2.40 Max 2.10 2.20 2.30 2.40 2.50 2.60 2.70
< VF Rank >
VF
Rank Symbol D E F G Min 1.9 2.1 2.3 2.5 Max 2.2 2.4 2.6 2.8
< Mark Position >
21D
TOSHIBA MG300Q2YS61
22E
Low side
High side
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MG300Q2YS61
IC - VCE
600 Common emitter 20 500 15 Tj = 25C 12 400 20 500 600
IC - VCE
Common emitter 15 Tj = 125C
(A)
(A)
12 400
IC
Collector current
300
Collector current
IC
300
200 10 100 VGE = 9 V 0 0 2 4 6 8 10
200
10
100
VGE = 9 V
0
0
2
4
6
8
10
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 Common emitter 12 Common emitter Tj = 25C Tj = 125C
VCE - VGE
(V)
10
(V) VCE Collector-emitter voltage
10
VCE
8
8
Collector-emitter voltage
6 300 4 600
6 300 4 600
2 IC = 150 A 0 0 5 10 15 20
2 IC = 150 A 0 0 5 10 15 20
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
VCE - VGE
12 Common emitter 600 Common emitter 500 VCE = 5 V Tj = -40C
IC - VGE
(V)
10
VCE
Collector-emitter voltage
6 300 4 600 2 IC = 150 A 0 0 5 10 15 20
Collector current
IC
8
(A)
400 300 Tj = 125C 200 25 100 -40
0 0
2
4
6
8
10
12
14
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
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MG300Q2YS61
IF - VF
600 Common cathode 500 1000 VGE = 0 -40 Common emitter RL = 2 W Tj = 25C
VCE, VGE - QG
20
(V)
VCE
800
16 400
(A)
Forward current IF
400
Collector-emitter voltage
Tj = 25C
600
600 200 VCE = 0 V
12
300
400
8
200
125
100
200
4
0
0
1
2
3
4
5
0 0
500
1000
1500
2000
0 2500
Forward voltage
VF
(V)
Charge
QG
(nC)
Switching time - RG
10000 VCC = 600 V IC = 300 A VGE = 15 V Ls = 80 nH : Tj = 25C : Tj = 125C td (off) tr td (on) 100 tf 1000
Switching loss - RG
VCC = 600 V IC = 300 A VGE = 15 V Ls = 80 nH : Tj = 25C : Tj = 125C Eon 100
1000
Switching time
ton
Switching loss
(mJ)
(ns)
toff
Eoff
10 0
2
4
6
8
10
12
14
16
10 0
2
4
6
8
10
12
14
16
Gate resistance RG
(9)
Gate resistance RG
(9)
Switching time - IC
10000 VCC = 600 V, RG = 2.7 W VGE = 15 V, Ls = 80 nH : Tj = 25C : Tj = 125C 100
Switching loss - IC
toff
1000
(mJ)
(ns)
Eoff
Switching time
ton 100 td (on) tr 10 0 50 100
tf
td (off)
Switching loss
10 VCC = 600 V RG = 2.7 W VGE = 15 V Ls = 80 nH : Tj = 25C : Tj = 125C 50 100 150 200 250 300
Eon
150
200
250
300
1 0
Collector current
IC
(A)
Collector current
IC
(A)
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Gate-emitter voltage VGE
(V)
MG300Q2YS61
Irr, trr - IF
1000 10
Edsw - IF
(mJ) Reverse recovery loss Edsw
Irr (A) (ms)
trr
Peak reverse recovery current Reverse recovery time trr
100 Irr Common cathode VCC = 600 V RG = 2.7 W VGE = 15 V : Tj = 25C : Tj = 125C 50 100 150 200 250 300
1 Common cathode VCC = 600 V RG = 2.7 W VGE = 15 V : Tj = 25C : Tj = 125C 50 100 150 200 250 300
10 0
0.1 0
Forward current
IF
(A)
Forward current
IF
(A)
C - VCE
100000 50000 3000
Safe operating area
(pF)
(A)
30000
1000 Cies
IC max (pulsed) * IC max (continuous) 50 ms*
Capacitance C
10000 5000 3000 Coes
Collector current
IC
300
100 DC operation 30 * Single nonrepetitive pulse Tc = 25C 10 Curves must be derated lineary with increase in temperature. 3 1 3 10 30 1 ms* 100 ms*
1000 Common emitter 500 f = 1 MHz 300 0.1 0.3 0.5 1 3 5 10 Cres 30 50 100
100
300
1000
3000
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Reverse bias soa
1000 1
Rth (t) - tw
Transient thermal resistance Rth (j-c) (C/W)
Tc = 25C 0.3 0.1 0.03 0.01 0.003 0.001 0.0003 0.001 Diode stage
Collector current
IC
(A)
100
Transistor stage
Tj < 125C = VGE = 15 V RG = 2.7 W 10 0 200 400 600 800 1000 1200 1400
0.01
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw
(s)
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MG300Q2YS61
Short circuit soa
10000
(A) Collector current IC
1000 100 VGE = 15 V tw = 10 ms Tj = 125C 10 0 200 400 600 800 1000 1200 1400
Collector-emitter voltage
VCE
(V)
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MG300Q2YS61
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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